Abstract
The X-ray diffraction and electrical and magnetic properties of GaSb:Mn layers deposited on GaAs (100) substrates from a laser plasma in free space are studied. It is shown that the films deposited at 200–440°C are epitaxial mosaic single crystals. Manganese-doped layers (up to ∼4 at % Mn) had a hole concentration higher than 1 × 1019 cm−3. Structures with the GaSb:Mn layers grown at 200°C had an anomalous Hall effect. A normal Hall effect was observed for the GaSb:Mn layers grown at 440°C. The exposure of these layers to a laser pulse (wavelength λ = 0.68 μm, duration 25 ns) caused an increase in the hole concentration and the emergence of the anomalous Hall effect at room temperature. Magnetic ultrahigh-frequency measurements confirmed that the films were ferromagnetic up to 293 K and revealed a magnetism anisotropy.
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