Properties of the defect mode of a ternary photonic crystal having an n-doped semiconductor as a defect layer: TE case

Abstract

In this work, a ternary photonic crystal having an n-doped semiconductor as a defect layer is considered. Tunable properties of the transmission spectra are investigated for TE waves. The three layers of the proposed photonic crystal are Si, Bi4Ge3O12 and SiO2 and the defect layer is n-GaAs. The transmission properties and defect mode of the structure may be controlled by using the doping rate, applied magnetic field and width of the n-GaAs layer. The defect layer width is found the most efficient factor among these three factors. The analysis is performed in the near-infrared spectral region. The proposed structure can be used to construct filters with narrowband transmission peaks.