Abstract
In the present paper, a novel photonic crystal (PC) defect mode is designed by inserting a ferroelectric material layer (LiNbO3) into Si/C60 one-dimensional PCs. The band structure of the ferroelectric PCs is numerically analyzed by the transfer matrix method (TMM). The width of the photonic band gap increases by 80nm and a defect mode appears at a central wavelength of 680nm when a 150nm LiNbO3 layer is inserted into the Si/C60 PC structure. The defect mode in the band gap shifts linearly with the change in electric field. The defect mode shifts by 11.2nm toward shorter wavelengths when the thin film is subjected to a DC voltage of 1KV.
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