Abstract
The decay of the 9.699 MeV level in 28Si has been studied using the reaction 27Al(p,γ)28Si at Ep = 1724 keV. Gamma rays from the decay of the 9.699 MeV level were observed with large-volume Ge(Li) detectors. Branching ratios for the decay of the 9.699 MeV level have been obtained and a lower limit for the lifetime of this level has been measured to be [Formula: see text] using the Doppler-shift attenuation method.
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