Properties of the 78 meV acceptor in GaAs

Abstract

An acceptor with a binding energy of 78 meV is frequently observed in LEC GaAs. As a commonly observed acceptor its identification and control are important aspects of materials development. It has recently been shown to be a double acceptor with a second level at 203 meV. Although it is a common center its origin has not yet been conclusively determined; both the gallium antisite and boron on the arsenic site are often proposed origins. Experimental and theoretical studies of this acceptor are reviewed including the identification of the center as a double acceptor, the origins of the various photoluminescence properties, infrared absorption by the electronic levels of this impurity, Raman studies of the S-states, and experiments bearing on its identification.