Abstract
Surface conductivity and Hall coefficient of germanium cleaned by ion-bombardment and subsequent annealing have been measured over the temperature range 1.5–300°K. The results indicate that donor levels are produced near the surface by ion-bombardment and are eliminated with subsequent annealing at 500°C in high vacuum making the surface space charge layer p-type. The density of the excess holes near the surface has a magnitude of 8×10 11 cm -2 for an n-type of 8\(\varOmega\) cm and 8.5×10 10 cm -2 for a p-type of 20\(\varOmega\) cm. Ion-bombardment gives rise to a small Hall maximum at low temperatures around 5°K. This maximum shifts to higher temperatures as annealing treatments are repeated and disappears if air is introduced. This maximum is attributed to holes of the order of 10 7 cm -2 in the space charge layer.
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