Abstract
Strontium ferrite thin films have been deposited on silicon wafer with Al-Si underlayer by using a magnetron sputtering system. The obvious peak for strontium ferrite films deposited on Al-Si underlayer can be observed when substrate temperature is higher than 550degC. The saturation magnetization, coercivity, and remanent squareness ratio of strontium ferrite thin films increase with increasing substrate temperature. The maximum of coercivity and remanent squareness ratio in perpendicular direction are 6.4 kOe and 0.72, respectively, at substrate temperature of 600degC.
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