Abstract
Thin film PV devices were fabricated in FTO/CdS/CdTe/Cu/Au superstrate configuration by RF sputtering of CdS and CdTe films, and CdCl2 activation process was performed at 370, 380 and 390°C, respectively. Morphological studies indicated for the first time that there were numerous holes randomly distributed at the as-deposited CdS/CdTe interface; although the holes were reduced after CdCl2 annealing, the p–n junction was greatly improved. Further, the new concept of solar spectrum window width (ΔEg) for the solar cells was demonstrated, and the ΔEg of CdTe solar cells was found to be extended with increasing annealing temperature. Moreover, the efficiency of CdTe solar cells was dramatically improved from 0.02% to 12.02% as a function of annealing temperature, and the values of J0 and A were reduced with the optimal values (7.2×10−7mA/cm2 and 1.87), indicating the primary carrier recombination of the best device was Shockley–Real–Hall mechanism in the space charge region.
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