Abstract
Varied silicon oxynitride SiO x N y films are grown by low pressure chemical vapour deposition (LPCVD) from silane SiH 4, nitrous oxide N 2O and ammonia NH 3 by adjusting the N 2O/NH 3 gas flow ratio. Film thicknesses and refractive indexes are measured by ellipsometry and profilometry. The SiO x N y stoichiometries are characterized by X-ray photoelectron spectroscopy (XPS) and the results are compared to the Bruggeman theory applied to the SiO 2/Si 3N 4 heterogeneous medium. Film residual stresses are finally characterized by profilometry through wafer curvature measurements. From compressive to tensile stress values are obtained, evidencing the existence of a no-stress oxynitride film. Such phenomena are related to the SiO x N y stoichiometry and explained by considering the deposition mechanisms of the SiH 4/N 2O/NH 3 gaseous mixture and the thermo-mechanical properties of silicon oxynitride.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
