Abstract
Molecular beam epitaxy was used to deposit single crystal thin film Fe1−xGax samples on ZnSe buffer layers grown on (001) and (110) single crystal GaAs substrates. The crystal quality of the GaAs surface and each deposited layer was monitored in situ by reflection high energy electron diffraction. The magnetic properties of the samples were characterized by vibrating sample magnetometry and ferromagnetic resonance (FMR). The FMR linewidth increases dramatically with Ga concentration while the cubic anisotropy term K1 switches sign.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
