Abstract
Molecular beam epitaxy was used to deposit single crystal thin film Fe1−xGax samples on ZnSe buffer layers grown on (001) and (110) single crystal GaAs substrates. The crystal quality of the GaAs surface and each deposited layer was monitored in situ by reflection high energy electron diffraction. The magnetic properties of the samples were characterized by vibrating sample magnetometry and ferromagnetic resonance (FMR). The FMR linewidth increases dramatically with Ga concentration while the cubic anisotropy term K1 switches sign.
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