Properties of silicon nitride films prepared by magnetron sputtering

Abstract

Numerous silicon nitride films were prepared using different target materials (Si3N4 or Si) and different discharge gases (Ar or N2). In the case with an Si4N4 target and Ar gas pressure (1 Pa), the N-to-Si atomic ratio of the film was stoichiometric, 1.33, even when the substrate temperature was changed considerably. When the As gas pressure was increased from 1 7 Pa, the nitrogen content increased while the deposition rate decreased. In the case with an Si3N4 or Si target and N2 gas, the nitrogen content increased while the deposition rate decreased with the increase in N2 pressure. The change in deposition rate due to the pressure was investigated using optical emission spectroscopy.X-ray photoelectron spectroscopy analysis showed that the binding energy is the same if the N-to-Si ratio was in the range from 1.33 to 1.70. It was found by X-ray diffraction analysis that crystallization occured when the substrate temperature was higher than about 1173 K.