Abstract
Silicon nanostructures present a new class of material systems that possess electrical and optical properties distinctly different from bulk silicon. Fabrication process for silicon nanopillars has been described earlier. Now we present optical studies of nanostructures based on silicon nanopillars. Properties of silicon nanostructures were investigated by photoluminescence (PL) and cathodoluminescence (CL) techniques. For electroluminescence (EL) measurements the pillar based device described in [A. G. Nassiopoulos et al. Appl. Phys. Lett. 69, 2267 (1996)] was used. Electroluminescent devices, based on silicon nanostructures were made after planarisation and top electrode formation. Obvious distinctions between PL and EL spectra show that the PL and EL of the pillars are caused by various luminescent centers, located in different parts of the pillars. EL originates from the top contact part of the pillars. The origin of PL is connected to the combined effect of a texturised surface and nonuniform sidewall composition of the pillars.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
