Abstract
In this work, silicon-rich silicon nitride (SRN) layers were deposited on a silicon wafer bymicrowave-assisted plasma-enhanced chemical vapor deposition (MW-PECVD) usingNH3 andSiH4 as precursor gases. The Si excess in the as-deposited layers as determined by theRutherford backscattering technique was controlled by varying the precursor gasratio. We were able to produce silicon nanoparticles (Si-nps) in the silicon nitride (SiNx) layers upon thermal annealing at high temperature. Energy-filtered TEM (EFTEM),complemented by photoluminescence measurements, were used to identify the experimentalparameters in order to reach a high density of well-separated Si-nps (3 nm). Our resultsshow that the MW-PECVD method is a suitable deposition tool for the formation of Si-npsin thin SRN layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
