Abstract
Silicon film deposits have been produced in vacuum using the flux of silicon ions and liquid droplets from a field emission deposition (FED) sprayer. Structural investigations show the film to contain small scattered crystallites with diameters in the range 0.01-0.25 μm against a background of amorphous material produced by splat quenching of the liquid droplets. The optical and electrical properties of the film are compared with those of both polycrystalline silicon and amorphous silicon produced by glow discharge decomposition of SiH 4. Finally, the behaviour of some elementary devices fabricated using the FED technique is discussed.
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