Abstract
The structural and electrical properties of SiGe films deposited by reactive thermal chemical vapor deposition using a lamp heating system with a source gas mixture of GeF4 and Si2H6 were investigated. In the SiGe film depositions with respective GeF4 and Si2H6 flow rates of 0.06 and 3 sccm, the film structure changed from crystalline to amorphous during the film growth. The results of secondary ion mass spectroscopy analysis and high-temperature deposition suggest that the gas phase reactions cause the structural change. To suppress the gas phase reactions, low-pressure depositions are investigated. The SiGe film deposited at a relatively low pressure of 400 Pa shows good crystallinity. The thin-film transistor with this SiGe film also reveals a high p-channel mobility of about 10 cm2·V-1·s-1.
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