Abstract
ABSTRACTSi1−zGez single crystal layers were grown on Si(iii) by liquid phase epitaxy (LPE) over the entire composition range (0 ≤ x ( 1). Using Sn as solvent all compositions were produced; alloys with compositions 0 ≤ x ≤ 0.75 were obtained using In as solvent; the range 0.75 ≤ x ≤ 1 was covered with Bi solvent. The solvents used, the composition of the solution, the saturation temperature, and the cooling rate, were found to strongly influence the growth morphology.
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