Abstract
In this study, we present the use of SiC/PVA composite thin films as downshifting layers (LDS) in order to improve the photoelectrical parameters of a Si-based solar cell. We showed that the adding of these layers increases the short circuit current density. This increase could surely lead to the improvement of the power conversion efficiency since the two parameters are relied. The J–V characterizations of the as made c-Si solar cell measured under white light showed an enhancement of the photocurrent after coating the c-Si solar cell with SiC-based LDSs. The same behavior was noticed upon exposure to UV light illumination which depended strongly on the elaboration conditions of the luminescent porous SiC particles. A decrease in total reflectance of the c-Si solar cell coated with SiC based LDS was also observed. Spectral Response measurements have shown significant enhancement where the solar cells have poor optical response.
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