Properties of Polydisperse Tin-doped Dysprosium and Indium Oxides

Tatyana Malinovskaya,Valentin Suslyaev,Eugeny Korovin,Sergey Pavlov,Valentina Zhek,Sergey Melentyev,Ilya Lysak,Kirill Dorozhkin,M Kazaryan,A Godymchuk,L Rieznichenko

doi:10.1051/matecconf/20179600010

Abstract

The results of investigations of the complex permittivity, diffuse-reflectance, and characteristics of crystal lattices of tin-doped indium and dysprosium oxides are presented. Using the methods of spectroscopy and X-ray diffraction analysis, it is shown that doping of indium oxide with tin results in a significant increase of the components of the indium oxide complex permittivity and an appearance of the plasma resonance in its diffuse-reflectance spectra. This indicates the appearance of charge carriers with the concentration of more than 10 21 cm −3 in the materials. On the other hand, doping of the dysprosium oxide with the same amount of tin has no effect on its optical and electromagnetic properties.

Highlights

IntroductionDoping of oxides with various chemical elements allows modifying these parameters over a wide range
Development of modern electronics leads to the need of searching for new promising materials, which are characterised by high chemical and thermal resistance, high permittivity (ε = 8-20) and resistivity (ρ = 10131016 Ω·cm)
The most widely studied oxide material used in electronics is indium oxide doped with tin (ITO), which is a solid solution of indium oxide (III) and tin (IV)

Summary

Introduction

Doping of oxides with various chemical elements allows modifying these parameters over a wide range. Studies of the dysprosium oxide doping with various elements are of considerable practical interest. The use of such dopants as Ce, Rh, Zr, and Hf [2,3,4,5] is well known, but there are practically no data on doping of dysprosium oxide with Sn. At the same time, the most widely studied oxide material used in electronics is indium oxide doped with tin (ITO), which is a solid solution of indium oxide (III) and tin (IV). Doping with tin allows increasing concentration of charge carriers in indium oxide up to 1021 cm-3 due to the shallow impurity levels formed in its energy-band structure, which significantly affects the electrical and other properties of In2O3

Objectives

Results

Conclusion