Properties of polycrystalline ZnSe thin films grown by ion-beam deposition

Abstract

Polycrystalline ZnSe thin films were grown by ion-beam deposition on glass substrates. The crystallinity of ZnSe films grown by ion-beam deposition is affected by ionization. In particular, at a substrate temperature of 200 °C, there is an abrupt increase in the number of (311) oriented grains. Without ionization, the (111) oriented grains predominate. Transmittance of ZnSe films is improved by ion-beam deposition at substrate temperatures below 200 °C, in the wavelength range of 460–550 nm near the interband absorption edge. Ion-beam deposition has a heating effect on the film surface during deposition by ion bombardment, which controls the crystallinity and the optical properties of ZnSe films at low substrate temperature on noncrystalline substrates.