Abstract
Two modeling techniques to characterize fracture behavior of polycrystalline diamond films are discussed. The first technique is a multiscale modeling method in which first-principles local density approximation calculations on selected structures are combined with an analytic mesoscale model to obtain energies and cleavage fracture energies for symmetric ⟨001⟩ tilt grain boundaries (GBs) over the entire misorientation range. The second technique is large-scale atomistic simulation of the dynamics of failure in notched polycrystalline diamond samples under an applied strain. Electronic characteristics of selected ⟨001⟩ symmetrical tilt GBs calculated with a semiempirical tight-binding Hamiltonian are also presented, and the possible role of graphitic defects on field emission from polycrystalline diamond is briefly discussed.
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