Abstract
This work investigates properties of Poly (3,4-ethylenedioxythiophene)–poly (styrene sulfonate) (PEDOT:PSS) on black silicon (nanotextured) and hybrid textured (nanotextured/microtextured) surfaces. The black silicon (b-Si) surface is fabricated using two-step metal-assisted chemical etching (MACE) process on crystalline silicon (c-Si) while the hybrid textures are fabricated using two-step MACE process on microscale pyramids. With PEDOT:PSS, weighted average reflection (WAR) reduces from 9.2% to 7.7% for b-Si and from 7.2% to 5.2% for hybrid textures. This is due to the anti-reflective (AR) property of the polymer. Electrical characterizations of the PEDOT:PSS layer reveal higher sheet resistance (Rs), lower hole concentration (nh) and improved mobility (μh) with the presence of the surface textures on c-Si, in comparison to the results from planar c-Si reference.
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