Abstract
Properties of silicon oxynitride films on substrates formed by plasma‐enhanced chemical vapor deposition (PECVD) employed as diffusion barriers have been reported. The relation between the refractive index and the composition of films, the thermal stability and the barrier ability to Zn impurity diffusion have been discussed; and we propose an optimum range of the refractive index of the PECVD films for excellent diffusion barriers and a suitable structure for selective diffusion barriers.
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