Abstract
The properties and formation mechanism of a surface passivation film on silicon are discussed. The film is produced by a staining reaction in a mixed HF–NO2 gas, followed by a subsequent low temperature oxidation. It is found that the stain film formation reaction is accompanied by the surface etching reaction. From experiments by varying the composition of the mixed gas and conditions of the treatment, it is found that particularly NO2 gas component has an important bearing on the film forming and etching reactions. These reactions are independent of the conductivity type or the specific resistivity of the silicon. The present surface passivating film results in surface stabilization of silicon devices by having high breakdown voltage.
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