Abstract
The stable properties of N-doped p-type ZnO thin films with preferential nonpolar (100) plane orientation relative to polar (002) plane orientation are investigated. The two kinds of oriented thin films are fabricated by the methods of post heat treatment and double sources in situ, respectively. The Hall investigations demonstrate that N-doped p-type ZnO thin films with preferential nonpolar (100) plane orientation are more stable,and the results are also proved by build-in electric field model and electronic structure calculations of the films based on the first principle.
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