Abstract
The transport properties of a p-GaAs/sawtooth doping superlattice (SDS)/n+-GaAs structure has been studied. It is known that the transport properties vary with temperature. Experimentally, a diode-like performance is obtained, due to the thermionic emission, at room temperature. However, a quite different S-shaped negative-differential-resistance (NDR) phenomenon, resulting primarily from the avalanche multiplication in the SDS region, is observed at 77 K. The existence of different performance modes, i.e., diode and switch, on the same wafer chip provides more flexibility for device and circuit applications.
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