Abstract
Organic light emitting devices with the structure of ITO/ZnO/TPD/Alq3/Al were prepared by vacuum thermal evaporation method. By establishing multi-layer structure model, the photoelectric properties of the devices with different thickness ZnO anode buffer layers were discussed, the relationship of current density and luminous efficiency with work voltage was found and the comparison analysis with CuPc devices were carried out as well. The results showed that ZnO as the stable dipole layer between ITO and TPD can reduce the potential barrier for holes injection, promote the compound of electrons and holes, when ZnO thickness was 3 nm, the devices had minimum potential barrier and best luminous efficiency, the brightness increased nearly three times than traditional CuPc devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
