Properties of one Dimensional Photonic Crystals with Defects Thickness and Temperature Dependence

Abstract

The transmission properties of one dimensional photonic crystals with two defects having structures (HL)n(D1LD2L)m(HL)n, where m is the stack number of the Photonic Quantum Well (PQW) have been theoretically investigated by the transfer matrix method. The thickness and temperature dependence of the defect modes have been studied by considering Si and air as the high and low refractive index materials with GaAs and InSb as the two defects. For a defect lattice with m=1 (two defects) the two peaks due to defects are shifted towards the higher wavelength region, when the thickness of the defect layers is changed. Also, the transmittance peaks are shifted by 0.44nm/K and 0.50nm/K due to temperature variation. The above shifts for other cases (m ≠ 1 and n ≠ 1), have also been obtained. Part of these results is in qualitative agreement with the results available in the literature for other photonic crystals.