Abstract
Heterojunction diodes fabricated by filtered cathodic vacuum arc (FCVA) deposition of n-type (nitrogen-doped) tetrahedral amorphous carbon (ta-C) on p-type crystalline silicon are analyzed in terms of their electronic and photoresponse properties. The thin ta-C films are deposited at room temperature allowing the ready formation of ideal step junctions. The abrupt nature of the heterojunctions is confirmed from SIMS measurements. Capacitance-voltage (C-V) characteristics also show that with an abrupt heterojunction between ta-C and Si, an interface state density of the order of 10/sup 11/ cm/sup -2/ is obtained. Dark forward current density-voltage-temperature (J-V-T) characteristics are consistent with a current transport mechanism predominantly controlled by a tunnelling-recombination process through states at the ta-C/Si interface. The photospectral response and photovoltaic behavior of the junction are also presented as a function of doping in the ta-C. The response time of these unoptimized diodes is found to be in the range of 0.1-1.5 /spl mu/s.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
