Abstract
A rotating table sputter system was used to coat substrates with refractory metal-silicon mixtures as the substrates alternately passed under refractory metal and silicon elemental targets. By varying target power, silicon rich, silicon defficient, or stoichiometric films of the disilicides could be deposited. Film resistivity was investigated as a function of anneal time and temperature, film thickness and grain size. Sheet resistance of of less than 1 ohm per square was found for WSi2 films of 300nm thickness and for MoSi2 films of 500nm thickness when annealed at 1000 °C for 30 min, This corresponds to 30 and 50 micro-ohm cm resistivity respectively. Film thickness was determined from surface profilometry of etched steps for films deposited over silicon nitride and by Rutherford Backscattering Spectrometry for films deposited over single-crystal or polysilicon films.
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