Abstract
High quality bulk aluminum nitride substrates were used to obtain pseudomorphic AlxGa1-xN layers with low dislocation density, smooth surfaces, and high conductivity. These layers were fabricated into mid-ultraviolet light emitting diodes with peak wavelengths in the range of 240–260 nm. The low dislocation density of the pseudomorphic quantum wells resulted in improved performance over previously published data. The output powers of the on-wafer measurements were greater than 5 mW in continuous wave operation, and 16 mW in pulsed operation. This was achieved utilizing single die (with an active area of 1×10-3 cm2).
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