Properties of metal-semiconductor contacts with plasma deposited silicon nitride interfacial layers

Abstract

The properties of metal-semiconductor contacts with very thin silicon nitride interfacial layers grown on the semiconductor surface by remote plasma technique are reported. Tungsten and titanium on both p- and n-type silicon and gold on n-type gallium arsenide were used. The observed shift of Schottky barrier heights towards the Schottky limit is explained in terms of semiconductor surface passivation. Thermal stability of these contacts was also investigated. Thermally stable W / silicon nitride/ silicon and Au/silicon nitride/GaAs Schottky contacts were obtained.