Abstract
Films 100–200 nm thick have been deposited at 200°C by reactive sputtering of a silicon target in nitrogen‐argon mixtures using an RF planar magnetron system. Film properties were examined in reference to nitrogen partial pressure and sputtering gas pressure. At nitrogen partial pressure higher than a certain pressure, silicon nitride films are deposited. Properties of silicon nitride films are remarkably dependent on sputtering gas pressure. By controlling the pressure, silicon nitride films have been synthesized with 1.7–200 nm/min etching rate in buffered , density, 1.97–1.82 refractive index, compressive intrinsic stress and breakdown voltage. High density, low etching rate films deposited under optimized sputter conditions act as an efficient barrier to oxygen diffusion in oxygen atmospheres at high temperature. In addition, it was demonstrated from MOS device characteristics that the silicon nitride films are free from contaminants and can be successfully applied to device fabrication.
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