Abstract
The properties of low-k SiCOH film deposited by plasma-enhanced chemical vapor deposition using trimethylsilane are reported here. The deposition process was performed at different temperatures from 200 to 400°C. The influence of deposition temperature on the films were characterized using Fourier transform infrared spectroscopy (FTIR) to understand its impact on the studied properties. The films were annealed at ∼450°C in an inert ambient after deposition in all the cases. The deposition rate decreases with increase in deposition temperature. The refractive index of the films increases as a function of deposition temperature. From FTIR spectra, OH-related bonds were not detected in films even when deposited at 200°C. The Si–CH3 bonds were detected in all the films and decreased monotonically from 200 to 400°C. All deposition conditions studied resulted in films with dielectric constant less than 3, the lowest being ∼2.7 when deposited at 200°C. All films exhibited good thermal stability.
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