Abstract
Both the electrical and mechanical properties of silica thin films deposited by liquid phase deposition (LPD) have been evaluated in this study. Silica thin films have been prepared on glass surface by immersing it in a supersaturated Hexafluorosilicic acid (H 2 SiF 6 )-based solution at a low temperature of 50°C. The as-deposited LPD silica fihns exhibit a low dielectric constant (k) that varies from 1.7 to 2.7 depending on the film morphology and fluorine content of the film. Young's modulus of these films was measured in the range of 18.9-24.5 GPa by a nanoindentation technique. The combination of extremely low k and fairly high modulus made this low-temperature-processed LPD silica films a very promising candidate for an interlayer dielectric film for the next-generation semiconductor devices.
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