Abstract
The properties of homostructure Pb1−xXnxTe diode lasers with tin compositions x=0.126, 0.182, 0.210, and 0.238 fabricated from liquid-phase epitaxy grown p+-p-n+ layer structure with Ga-doped n-type cladding layer were investigated. Threshold current density (Jth) and quantum efficiency (ηext) was measured as a function of temperature in the range 10≤T≤140 K. Current versus voltage (I-V) and product derivative I dV/dI vs I characteristics were measured at T=10 and 40 K. Jth was evaluated from basic principles taking into account intrinsic radiative and nonradiative Auger recombination lifetime, where the last was calculated using both parabolic and nonparabolic energy band structures. Satisfactory agreement was obtained between the calculated and measured Jth for temperatures above 40 K, while at low temperatures the theory underestimates Jth significantly. Using an electrical equivalent model of the diode laser and best fit procedure the I-V and I dV/dI vs I characteristics were analyzed and the various current components and diode laser parameters were obtained. It was qualitatively shown that the discrepancy at low temperatures follows from the presence of large leakage and tunneling currents. The temperature dependence of the observed ηext, which exhibits a maximum between 40 and 50 K, was shown to be related to a filamentary lasing process.
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