Abstract
The properties of the IZTO thin films on the glass were studied with a variation of the SiO₂ buffer layer thickness. SiO₂ buffer layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on the glass, and the In-Zn-Tin-Oxide (IZTO) thin films were deposited on the buffer layer by RF magnetron sputtering. All the IZTO thin films with the SiO₂ buffer layer are shown to be amorphous. Optimum SiO₂ buffer layer thickness was obtained through analyzing the structural, morphological, electrical, and optical properties of the IZTO thin films. As a result, the IZTO surface roughness is 0.273 ㎚ with a sheet resistance of 25.32 Ω/sq and the average transmittance is 82.51% in the visible region, at a SiO₂ buffer layer thickness of 40 ㎚. The result indicates that the uniformity of surface and the properties of the IZTO thin film on the glass were improved by employing the SiO₂ buffer layer and the IZTO thin film can be applied well to the transparent conductive oxide for display devices.
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