Abstract
The ITO films were deposited on polyethylenenaphthalate at the room temperature using dc magnetron sputtering system with Ar ion-beam assist. The dc sputtering power was maintained at 200 W, and the Ar ion-beam power was varied from 20 to 70 W. The change in the resistance of the ITO films in the cyclic bending tests was significantly delayed with the Ar-ion-beam power 40 W. Also, the ITO film showed relatively low resistivity (5.39 × 10−4 Ωcm). Thus. the ITO film showed good mechanical and electrical properties attributable to the effect of Ar ion bombardment on the thin film formation.
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Schedule a callMore From: Molecular Crystals and Liquid Crystals Science and Technology. Section A. Molecular Crystals and Liquid Crystals
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