Abstract
The properties of iodine-doped (211) CdTe layers grown on (211) Si substrates by metalorganic vapor-phase epitaxy at high substrate temperatures from 325°C to 450°C were studied. The growth rate of the doped layer increased with increasing substrate temperature before reaching a maximum value of 2.6 μm/h at 425°C, after which it decreased slightly. On the other hand, the room-temperature electron density showed a strong dependence on the Te/Cd precursor flow-rate ratios, where the electron density increased with a decreasing Te/Cd ratio. The highest electron density of 2.5×1018 cm−3 was obtained by growing the epilayer at a substrate temperature of 400°C and Te/Cd ratio of 0.05. This was considered to be due to decreased donor compensation at a small Te/Cd ratio. Good correspondence was observed between the results obtained from Hall measurements and photoluminescence measurements.
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