Abstract
Ti 1− x Al x N films have been grown onto Si(1 0 0) substrate by d.c. reactive magnetron sputtering as a diffusion barrier between Cu and Si. The residual stresses of Ti 1− x Al x N films depended on the microstructure and composition. Higher residual stresses were obtained for Ti 1− x Al x N films deposited with higher bias voltage. The minimum residual stress was 11.4 MPa, found in Ti 1− x Al x N films deposited with a nitrogen flow rate of 8 ml/min and a bias voltage of −50 V. Residual stresses of Cu films decreased with the increase of surface roughness of the Ti 1− x Al x N films. The good adhesion of Ti 1− x Al x N films on Si substrate was due to the chemical reactions, however, the bad adhesion of Cu films on Ti 1− x Al x N films was attributed to the large residual tensile stresses in Cu film.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
