Abstract
Hydrogenated amorphous carbon (a-C:H) thin films were deposited on silicon and stainless steel (AISI 304) substrates by a plasma-based ion implantation (PBII) method using an electron cyclotron resonance (ECR) plasma source with a mirror field and a power supply to apply negative high-voltage pulses and a negative DC bias to the substrate. CH 4 gas was used as a carbon source. The plasma was produced from CH 4 gas with an ECR power supplier. Before the film deposition, carbon ions were implanted into the substrate surface by applying high-voltage pulses of −10 kV to form a carbon mixing layer. Tribological behaviors of the films were evaluated using a ball-on-disk friction tester. The a-C:H films with a smooth surface and an ultra-low friction coefficient in high vacuum were formed by applying negative high-voltage pulses of −2 kV to the substrates with a pretreatment of carbon ion-implantation. The life of a-C:H film was improved by the formation of the carbon-mixing layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
