Properties of high-efficiency CIGS thin-film solar cells

Abstract

We present experimental results in three areas. Solar cells with an efficiency of 19% have been fabricated with an absorber bandgap in the range of 1.1-1.2 eV. Properties of solar cells fabricated with and without an undoped ZnO layer were compared. The data show that high efficiency cells can be fabricated without using the high-resistivity or undoped ZnO layer. Properties of CIGS solar cells were fabricated from thin absorbers (1 /spl mu/m) deposited by the three-stage process and simultaneous co-deposition of all the elements. In both cases, solar cells with efficiencies of 16%-17% are obtained.