Abstract
HfO2/La2O3 nanolaminate (HLOL) films were grown on AlGaN/GaN heterostructure by plasma enhanced atomic layer deposition (PEALD). After high-temperature rapid thermal annealing (RTA), the properties of the films were characterized. Si (coming from the La2O3 metal precursor) and La atoms diffuse into the HfO2 layer, cubic and tetragonal phase HfO2 exist in the HLOL film. The HLOL film has an effective dielectric constant of 35.7 and a breakdown electric field of 5.5 MV cm−1. Moreover, the HLOL film is an effective barrier to suppress the gate leakage current, which is 5 orders of magnitude lower compared to a conventional Schottky diode. The HLOL dielectric film on AlGaN/GaN could also improve the gate voltage swing range.
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