Abstract
HfO 2 thin films were prepared in dual-ion-beam reactive sputtering (DIBRS) method. Spectrophotometer, surface thermal lensing (STL) technique, Rutherford backscattering (RBS), and X-ray diffraction (XRD) were employed in measuring the transmittance, absorptance, stoichiometry, and microstructure, respectively. Experimental results indicate that the peak transmittance value of the sample is about 90%. Weak absorptance measurement for 1064 nm wavelength laser by STL technique investigated that the absorption is 180 ppm for as-grown sample, which is larger than expected. Substoichiometry is the main cause for larger absorptance, which could be proved by RBS and annealing test results. XRD result shows that the films are polycrystalline, and the monoclinic is the dominant phase.
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