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Abstract
Arrays of GaAs whiskers on GaAs(111)B substrates were grown using a technique combining vacuum evaporation and molecular-beam epitaxy. The surface structural properties of the samples obtained were studied by scanning electron microscopy. It was found that the areal density of the whiskers amounted to (1–2)×109 cm−2. The typical dimensions of the whiskers were 30–150 nm (diameter) and 300–800 nm (length). It was shown that the whisker size can be controlled by changing the growth conditions and varying the thickness of the evaporated Au film.
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