Abstract
Magnetoresistance effect due to the spin-dependent scattering and the spin-polarized tunneling as well as the interlayer coupling in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconductor-based magnetic trilayer structures were studied. Both current-in-plane resistance and current-perpendicular-to-plane tunneling resistances are shown to depend on the relative magnetization directions of the two ferromagnetic (Ga,Mn)As layers. The interlayer coupling between the two (Ga,Mn)As layers is always ferromagnetic and the magnitude is weak (<0.5 μJ/ m 2) .
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