Abstract
A multilayered film of ZnO:Al and ZnO was prepared by alternating sputtering in Ar gas, and the influence on electrical properties of ZnO layers, inserted between ZnO:Al layers, was examined. Both the carrier concentration and the Hall mobility were increased. The data show that some carrier electrons now move in the undoped ZnO layer and that the film crystallinity was improved in the multilayered film deposition.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
