Abstract
Ferroelectric vinylidene uoride-tri uoroethylene (VDF-TrFE) copolymer lms were directly deposited on highly-doped and moderately-doped Si by using a spin coating method. The ferroelectric -phase peak of lms, depending on the annealing temperature, started to show up around 125 C, and the intensity of the peak increased with increasing annealing temperature. Above 175 C, the peak started to decrease, and at around 200 C, the peak disappeared. The VDF-TrFE copolymer lms showed a good polarization degradation property up to about 1011 switching cycles, and the switching charges degraded only by 16 % of their initial values after 1 day at room temperature. The MFS capacitor directly grown on a p-Si wafer with a resistivity of 1 10 cm showed that the memory window of the loop was about 2 V with a voltage sweep between 5 V and that the minimum interface state density around the midgap of the capacitor derived from the high-frequency C-V curve was less than 3 1011/cm2 eV.
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