Abstract
Indium sulfide hyperdoped with vanadium has been predicted to be a promising material to realize an intermediate band (IB) solar cell. Using co-evaporation of the elements we grew In 2 S 3 :V on (111)-oriented $p$ -Si substrates. As transparent top electrode n-ZnO:Al is used to realize heterostructure $pin$ -solar cells. Investigations of structural properties reveal epitaxial growth independent of the vanadium doping content. We further characterize pin-heterostructure solar cells by current-voltage characteristics in the dark and under illumination. We do not observe an increase of short circuit current density for V-doped samples, which indicates that the IB is fully occupied.
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