Abstract
Special features of the diamond seed-growth in the Mg-C growth system at pressure ≤ 8.2 GPa and a temperature of ∼ 1800–2000°C have been studied. The grown diamonds have been investigated by Raman, photoluminescence, and IR spectroscopies. It has been shown that single crystals produced in this system are type IIa+IIb conditionally nitrogen-free and the basic impurities are boron and silicon. The reasons for the capture of the basic impurities, B and Si, have been considered.
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