Abstract
Resistless microfabrication of Cu thin films on n-type GaAs by projection patterned laser doping using a KrF excimer laser and a SiH 4 gas is described. Copper thin films with a linewidth as narrow as 3.4 μm are deposited selectively on the doped region by electroplating in a CuSO 4 aqueous solution. Various properties of the Cu thin films deposited by changing the electroplating conditions are discussed. Using the selective metallization process, nonalloyed ohmic contacts can be formed with a specific contact resistance as low as 2.32 × 10 −5 Ω cm 2 , which is one-thirtieth of that of the conventional alloyed contacts.
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